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Thin ZrNxOy films are deposited on Si (100) substrates by radio frequency (RF) reactive magnetron sputtering of a zirconium target in an argon–oxygen–nitrogen mixture. The ΦN2/Φ(Ar + N2 + O2) ratio was varied in the range 2.5%–100% while the oxygen flux was kept constant. The films were characterized by combining several techniques: X-ray photoelectron spectroscopy, X-ray diffraction and Secondary Ion Mass Spectroscopy. The relationship between structural and compositional properties and the sputtering parameters was investigated. Increasing nitrogen partial pressure in the gas mixture, a chemical and structural evolution happens. At lowest nitrogen flux, ZrN cubic phase is formed with a very small amount of amorphous zirconium oxynitride. At highest nitrogen flux, only crystalline ZrON phases were found. For the films obtained between these two extremes, a co-presence of ZrN and ZrON can be …
Publication date: 
13 Jun 2007

MA Signore, A Rizzo, L Mirenghi, MA Tagliente, A Cappello

Biblio References: 
Volume: 515 Issue: 17 Pages: 6798-6804
Thin Solid Films