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The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350 °C using dimethylzinc (Me2Zn) and di‐isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR = 1.03) conditions results in best surface morphology, while samples grown in Te‐rich conditions (MFR > 1.7) showed micron‐size hollow defects (with surface densities up to ∼106 cm–2) elongated in one of the in‐plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga2Te3 extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p ‐ZnTe epilayers were prepared by tungsten evaporation and annealing at 350 °C. The RT hole concentration in …
Publication date: 
1 Nov 2005

P Paiano, P Prete, N Lovergine, AM Mancini

Biblio References: 
Volume: 40 Issue: 10‐11 Pages: 1011-1017
Crystal Research and Technology: Journal of Experimental and Industrial Crystallography