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We demonstrate a method for the simultaneous fabrication (without the need of expensive e-beam systems) of large arrays of nanodevices working at room temperature. The electrode gap is defined by a selective wet-etching of a AlGaAs/GaAs quantum well structure and controlled with nanometer precision. A selective oxidation of the Al rich barrier reduces the bulk leakage current by six orders of magnitude and extends the applicability of the produced devices to room temperature functionality. As a demonstration, we employ here these nanojunctions to investigate transport in molecular tunnel-junctions based on individual Azurins, a blue copper protein, under ambient conditions. This approach opens the way to the fabrication of complex circuits consisting of different nanodevices.
Publication date: 
1 May 2007

Giuseppe Maruccio, Pasquale Marzo, Roman Krahne, Antonio Della Torre, Adriana Passaseo, Roberto Cingolani, Ross Rinaldi

Biblio References: 
Volume: 84 Issue: 5-8 Pages: 1585-1588
Microelectronic engineering